Magnetic semiconductor element and a magneto-optical read out he

Details Magnetic semiconductor element and a magneto-optical read out he Magnetic semiconductor element and a magneto-optical read out he

1992-05-26

1993-07-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 43, 257425, 372 49, 372 46, 360113, 365157, H01L 2722

Patent

active

052296210

ABSTRACT:
A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.

REFERENCES:
patent: 3676795 (1972-07-01), Prah, Jr.
patent: 3986194 (1976-10-01), Masumoto et al.
patent: 4499515 (1985-02-01), Piotrowski et al.
Burke, Handbook of Magnetic Phenomena, 1986, pp. 264-265, Van Nostrand Reinhold Company, New York.

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