Magnetic resistance memory and method of writing data

Details Magnetic resistance memory and method of writing data Magnetic resistance memory and method of writing data

2007-11-20

2007-11-20

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S189070

Reexamination Certificate

active

11012114

ABSTRACT:
A magnetic resistance memory includes an identity determining unit that compares, bit by bit, first data stored in an address specified by a write request with second data to be written to the address, and that determines whether bit-by-bit values of the first data and the second data are identical; and a writing control unit that halts, when a bit of the second data is identical with a corresponding bit of the first data, writing of the bit of the second data.

REFERENCES:
patent: 3530441 (1970-09-01), Ovshinsky
patent: 6438665 (2002-08-01), Norman
patent: 2005/0235118 (2005-10-01), Moriyama et al.
patent: 7-65586 (1995-03-01), None
patent: 2003-330790 (2003-11-01), None
patent: 03/079365 (2003-09-01), None
K.F. Strauss and T. Daud, “Overview of Radiation Tolerant Unlimited Write Cycle Non-Volatile Memory,”Proc. 2000 IEEE Aerospace Conf., vol. 5, pp. 399-408.
S. Lai and T. Lowrey, “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications,”IEDM Dig. (2001), pp. 803-806.

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