Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1995-03-02
1996-09-10
Powell, William
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 11, 216 22, 216 79, 216 99, 252 795, 1566431, 1566621, B44C 122, H01L 2100
Patent
active
055543030
ABSTRACT:
An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc. placed in the vicinity of the CSS zone so that the surface-roughening effect is limited to the CSS zone by the deposition of particulates scattered therefrom leaving the recording zone unroughened not to decrease the recording density.
REFERENCES:
patent: 4985306 (1991-01-01), Morizane et al.
patent: 5166006 (1992-11-01), Lal et al.
patent: 5353182 (1994-10-01), Nakamura et al.
Kaneko Hideo
Nakazato Yasuaki
Tamai Noboru
Tawara Yoshio
Tokunaga Katsushi
Powell William
Shin-Etsu Chemical Co. , Ltd.
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