Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-08-17
1998-02-24
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 2041923, C23C 1434
Patent
active
057208611
ABSTRACT:
An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.
REFERENCES:
patent: 4529621 (1985-07-01), Ballard
Kaneko Hideo
Tawara Yoshio
Tokunaga Katsushi
Nguyen Nam
Shin-Etsu Chemical Co. , Ltd.
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