Magnetic recording element and device

Details Magnetic recording element and device Magnetic recording element and device

2007-09-11

2007-09-11

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

11147256

ABSTRACT:
A magnetic recording element, in which a spin-polarized electron is injected, has a layer whose magnetization direction is changed by the spin-polarized electron in accordance with a flow direction of the spin-polarized electron and records data in accordance with the magnetization direction. The magnetic recording element includes a free layer whose magnetization direction is changed by an action of a spin-polarized electron and has a spin polarization Pf. A pinned layer whose magnetization direction is fixed has a spin polarization Pp larger than the spin polarization Pf. An intermediate layer is interposed between the pinned layer and the free layer and consisting essentially of a nonmagnetic material.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6509621 (2003-01-01), Nakao
patent: 2002/0012207 (2002-01-01), Singleton et al.
patent: 2005/0168888 (2005-08-01), Miyauchi et al.
patent: 2003-229544 (2003-08-01), None
K. Yagami, et al., “Decreasing the switching Current in Spin-Momentum Transfer Switching by Decreasing Ms”, J. Magn Soc., vol. 28, No. 2, Feb. 2004, pp. 149-152.
Yiming Huai, et al., “Observation of Spin-Transfer Switching in Deep Submicron-Sized and Low-Resistance Magnetic Tunnel Junctions”, Applied Physics Letters, vol. 84, No. 16, Apr. 19, 2004, pp. 3118-3120.
Dexin Wang, et al., “70% TMR at Room Temperature for SDT Sandwich Junctions With CoFeB as Free and Reference Layers”, IEEE Transactions on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2269-2271.
F.J. Albert, et al., “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Applied Physics Letters, vol. 77, No. 23, Dec. 4, 2000, pp. 3809-3811.
R. Meservey, et al., “Spin-Polarized Electron Tunneling”, Physics Reports, vol. 238, No. 4, 1994, pp. 173-243.
R.J. Soulen Jr., et al., “Measuring the Spin Polarization of a Metal with a Superconducting Point Contact”, Science, vol. 282, Oct. 2, 1998, pp. 85-88.
U.S. Appl. No. 11/117,482, filed Apr. 29, 2005, Nakamura et al.
U.S. Appl. No. 11/147,256, filed Jun. 8, 2005, Morise et al.

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