Magnetic recording element

Details Magnetic recording element Magnetic recording element

2007-03-07

2009-12-01

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07626856

ABSTRACT:
A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wire, and voltage electrodes joined to the ferromagnetic fine wire and current electrodes to measure voltage across part of the ferromagnetic fine wire in cooperation with the current electrodes. A magnetic domain wall is induced in the ferromagnetic fine wire when the element is manufactured. A depression is formed in the surface on top of the ferromagnetic fine wire between the voltage electrodes, and between one of the current electrodes and one of the voltage electrodes. Voltage is measured between the two voltage electrodes when reading current is applied, to determine whether the magnetic domain wall is present between the two voltage electrodes, whereby recorded data can be identified.

REFERENCES:
patent: 2005/0088787 (2005-04-01), Takahashi et al.
patent: 11-120758 (1999-04-01), None
patent: 2005-191032 (2005-07-01), None
Yamanouchi et al., “Current-Induced Magnetic Domain Wall Motion in a Ferromagnetic Coercivity Patterned Structure”, Physical Society of Japan, Mar. 2005, Proceedings of the 60th Annual Conference.
A. Yamaguchi et al., “Real-Space Observation of Current-Driven Domain Wall Motion in Submicron Magnetic Wires”, Physical Review Letters, Feb. 20, 2004, pp. 077205-1-077205-4, vol. 92, No. 7.

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