Magnetic random access memory with stacked toggle memory cells

Details Magnetic random access memory with stacked toggle memory cells Magnetic random access memory with stacked toggle memory cells

2005-08-30

2005-08-30

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Three-dimensional magnetic array

C365S173000, C365S171000

Reexamination Certificate

active

06937497

ABSTRACT:
A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.

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