Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-05-26
2008-11-18
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
Reexamination Certificate
active
07453720
ABSTRACT:
A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.
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Chang Jei-Wei
Ju Kochan
Elms Richard
King Douglas
Maglabs, Inc.
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