Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-07-11
2006-07-11
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S055000, C365S066000, C365S171000
Reexamination Certificate
active
07075818
ABSTRACT:
A multiple-memory-layer magnetic random access memory (MRAM) has multiple memory layers arranged as pairs and stacked on a substrate. The first memory layer in the pair comprises a plurality of rows of memory cells located between electrically conductive access lines, and the second memory layer in the pair is substantially identical to the first memory layer, but is rotated about an axis perpendicular to the substrate so that the access lines and memory cell rows in one memory layer of the pair are orthogonal to their counterpart lines and rows in the other memory layer. The memory cells in each layer are aligned vertically (perpendicular to the substrate) with the memory cells in the other layer, with the vertically aligned memory cells forming memory cell columns that extend perpendicularly from the substrate. Each memory cell column has an electrical switch between the lowermost memory cell and the substrate.
REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5703805 (1997-12-01), Tehrani et al.
patent: 5838608 (1998-11-01), Zhu et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 5930164 (1999-07-01), Zhu
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6169689 (2001-01-01), Naji
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6272041 (2001-08-01), Naji
patent: 6331943 (2001-12-01), Naji et al.
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6515888 (2003-02-01), Johnson et al.
patent: 6535416 (2003-03-01), Daughton et al.
patent: 6559511 (2003-05-01), Rizzo
patent: 6590806 (2003-07-01), Bhattacharyya
patent: 6594175 (2003-07-01), Torok et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6621730 (2003-09-01), Lage
patent: 6631085 (2003-10-01), Kleveland et al.
patent: 6704220 (2004-03-01), Lauschner
patent: 6958502 (2005-10-01), Lu
patent: 2002/0009840 (2002-01-01), Torok et al.
patent: 2002/0036331 (2002-03-01), Nickel et al.
patent: 2002/0163834 (2002-11-01), Scheuerlein et al.
patent: 2003/0090930 (2003-05-01), Rizzo
patent: 2003/0156444 (2003-08-01), Lee
patent: 2003/0161180 (2003-08-01), Bloomquist et al.
patent: 2003/0170976 (2003-09-01), Molla et al.
patent: 2003/0198080 (2003-10-01), Iwata
patent: 2003/0214835 (2003-11-01), Nejad et al.
patent: 2003-133528 (2003-05-01), None
Reohr et al., “Memories of Tomorrow”, IEEE Circuits & Devices Magazine, Sep. 2002, pp. 17-27.
Desikan et al.., “On-chip MRAM as a High-Bandwidth, Low-Latency Replacement for DRAM Physical Memories”, Department of Computer Sciences Tech Report TR-02-47, The University of Texas at Austin, Sep. 27, 2002.
Katti, “Current-in-plane pseudo-spin-valve device performance for giant magnetoresistive random access memory applications (invited)”, Journal of Applied Physics, vol. 91, No. 10, May 15, 2002, pp. 7245-7250.
Katine et al., “Current-induced realignment of magnetic domains in nanostructured Cu/Co multilayer pillars”, Appl. Phys. Lett., vol. 76, No. 3, Jan. 17, 2000, pp. 354-356.
Maglabs, Inc.
Nguyen Tan T.
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