Magnetic random access memory with improved data reading method

Details Magnetic random access memory with improved data reading method Magnetic random access memory with improved data reading method

2004-04-13

2008-11-18

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189070

Reexamination Certificate

active

07453719

ABSTRACT:
An MRAM has a plurality of bit lines, a reference bit line, a plurality of memory cells and reference cells and a read section. The memory cells are provided along the bit lines and the reference cells along the reference bit line. The memory cell and reference cell have a tunneling magnetic resistance and a reference tunneling magnetic resistance, each of which has a spontaneous magnetization whose direction is reversed in accordance with data stored therein. The read section has a first resistance section which contains a ninth terminal connected with a bit line and a tenth terminal connected with the first power supply, a second resistance section which contains an eleventh terminal connected with the reference bit line and a twelfth terminal connected with the first power supply, and a comparing section which compares a sense voltage on the ninth terminal and a reference voltage of the eleventh terminal.

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