Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2009-05-15
2011-11-22
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S189160
Reexamination Certificate
active
08064245
ABSTRACT:
A magnetic tunnel junction (MTJ)-based magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure and methods for manufacturing and using same. The TAS MTJ-based MRAM cell includes a magnetic tunnel junction that is formed with an anisotropic shape and that comprises a ferromagnetic storage layer, a reference layer, and an intermediate insulating layer. The ferromagnetic storage layer has a magnetization that is adjustable above a high temperature threshold; whereas, the reference layer has a fixed magnetization. The ferromagnetic storage layer is provided with a magnetocrystalline anisotropy that is oriented essentially perpendicular to a long axis of the anisotropic shape of the magnetic tunnel junction. The TAS MTJ-based MRAM cell advantageously limits the effects of dispersion in the magnetic tunnel junction shape anisotropy coming from the fabrication process and features a lower power consumption when compared with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells.
REFERENCES:
patent: 4949039 (1990-08-01), Grünberg
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5343422 (1994-08-01), Kung et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5959880 (1999-09-01), Shi et al.
patent: 6191973 (2001-02-01), Moyer
patent: 6269016 (2001-07-01), Moyer
patent: 6304477 (2001-10-01), Naji
patent: 6317349 (2001-11-01), Wong
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6532164 (2003-03-01), Redon et al.
patent: 6535416 (2003-03-01), Daughton et al.
patent: 6603677 (2003-08-01), Redon et al.
patent: 6693822 (2004-02-01), Ito
patent: 6724674 (2004-04-01), Abraham et al.
patent: 6950335 (2005-09-01), Dieny et al.
patent: 6954375 (2005-10-01), Ohmori
patent: 6963098 (2005-11-01), Daughton et al.
patent: 7012832 (2006-03-01), Sin et al.
patent: 7129555 (2006-10-01), Nozieres et al.
patent: 7154798 (2006-12-01), Lin et al.
patent: 7307874 (2007-12-01), Jeong et al.
patent: 7310265 (2007-12-01), Zheng et al.
patent: 7508699 (2009-03-01), Hwang et al.
patent: 7518897 (2009-04-01), Nozieres et al.
patent: 2002/0057593 (2002-05-01), Hidaka
patent: 2003/0012063 (2003-01-01), Chien
patent: 2004/0095801 (2004-05-01), Stipe
patent: 2004/0160809 (2004-08-01), Lin et al.
patent: 2005/0002228 (2005-01-01), Dieny et al.
patent: 2005/0195658 (2005-09-01), Sousa et al.
patent: 2006/0062044 (2006-03-01), Jeong et al.
patent: 2006/0291276 (2006-12-01), Nozieres et al.
patent: 2008/0084724 (2008-04-01), Nozieres et al.
patent: 1 225 593 (2002-07-01), None
patent: 1 321 943 (2003-06-01), None
patent: 1 507 266 (2005-02-01), None
patent: 1 580 748 (2005-09-01), None
patent: 2 109 111 (2009-10-01), None
patent: 2 817 998 (2002-06-01), None
patent: 2 817 999 (2002-06-01), None
patent: 2 829 867 (2003-03-01), None
patent: 2 829 868 (2003-03-01), None
patent: 2 832 542 (2003-05-01), None
patent: WO 03/025942 (2003-03-01), None
patent: WO 03/025946 (2003-03-01), None
patent: WO 03/043017 (2003-05-01), None
patent: WO 2005/036559 (2005-04-01), None
patent: WO 2005/086171 (2005-09-01), None
patent: WO 2008/010957 (2008-01-01), None
patent: WO 2008/040561 (2008-04-01), None
EP Search Report, Application No. 09160167.4-1233, Aug. 28, 2009.
EP Examination Report, Application No. 07 818 777.0-2210, Aug. 4, 2009.
Purnama, Budi, et al., “Micromagnetic Simulation of Thermally Assisted Magnetization Reversal in Magnetic Nanodots with Perpendicular Anisotropy,” Journal of Magnetism and Magnetic Materials, 310 (2007) pp. 2683-2685.
US, Notice of Allowance and Fees Due, Jan. 2, 2009.
EPO, International Search Report, Apr. 10, 2008.
Saito, Y., et al, Bias Voltage and Annealing-Temperature Dependences of Magnetoresistive Ratio IR-MN Exchange-Biased Double Tunnel Junctions, Journal of Magnetism and Magnetic Materials 223, (2001) , pp. 293-298.
Crocus Technology S.A.
Luu Pho M
Pearne & Gordon LLP
LandOfFree
Magnetic random access memory with an elliptical magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic random access memory with an elliptical magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory with an elliptical magnetic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4254313