Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2010-06-01
Ho, Hoai V (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S442000, C365S225500
Reexamination Certificate
active
07728384
ABSTRACT:
A magnetic random access memory (MRAM) cell comprises a MRAM device and a single crystal self-aligned diode. The MRAM device and the single crystal self-aligned diode are connected through a contact. Only one metal line is positioned above the MRAM device of the MRAM cell. A first and second spacers positioned adjacent to the opposite sidewalls of the contact define the size of the single crystal self-aligned diode. A first and second metal silicide lines are positioned adjacent to the first and second spacers, respectively. The single crystal self-aligned diode, defined in a silicon substrate, includes a bottom implant (BI) region and a contact implant (CI) region. The CI region is surrounded by the BI region except for a side of the CI region that aligns the surface of the silicon substrate. A fabrication method, a read method, two programming methods for the MRAM cell are also disclosed.
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Ho Chiahua
Lung Hsiang-Lan
Shih Yenhao
Ho Hoai V
Lappas Jason
Macronix International Co. Ltd.
Stout, Uxa Buyan & Mullins, LLP
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