Magnetic random access memory (MRAM) for spontaneous hall...

Details Magnetic random access memory (MRAM) for spontaneous hall... Magnetic random access memory (MRAM) for spontaneous hall...

2005-05-17

2005-05-17

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S170000, C365S171000

Reexamination Certificate

active

06894920

ABSTRACT:
A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

REFERENCES:
patent: 5331589 (1994-07-01), Gambino et al.
patent: 5396455 (1995-03-01), Brady et al.
patent: 6603678 (2003-08-01), Nickel et al.

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