Magnetic random access memory (MRAM) array with magnetic tunnel

Details Magnetic random access memory (MRAM) array with magnetic tunnel Magnetic random access memory (MRAM) array with magnetic tunnel

1998-07-16

2000-08-01

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1114

Patent

active

06097625&

ABSTRACT:
A nonvolatile memory cell includes a substrate, a diode, a first conductive line, a magnetic tunnel junction device, a by-pass conductor and a second conductive line. The diode is formed in the substrate and includes an n-type region and a p-type region. The first conductive line is formed on the substrate and is electrically connected to the n-type region of the diode. The magnetic tunnel junction device is formed on the first conductive line. The by-pass conductor electrically connects the p-type region of the diode to the magnetic tunnel junction device. The second conductive line is formed on and is electrically connected to the magnetic tunnel junction device.

REFERENCES:
patent: 5347485 (1994-09-01), Taguchi et al.
patent: 5361226 (1994-11-01), Taguchi et al.
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5793697 (1998-08-01), Scheuerlein

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