Magnetic random access memory, magnetic random access memory...

Details Magnetic random access memory, magnetic random access memory... Magnetic random access memory, magnetic random access memory...

2007-07-03

2007-07-03

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

11200105

ABSTRACT:
A magnetic random access memory includes first and second write wirings, the second write wiring having first and second crossing angles formed by crossing the first write wiring, a first magnetoresistive element having a first axis of easy magnetization directed to a side of the first crossing angle and having a first recording layer including first and second ferromagnetic layers and a first nonmagnetic layer, and a second magnetoresistive element being electrically connected to the first magnetoresistive element, having a second axis of easy magnetization directed to a side of the second crossing angle, and having a second recording layer including third and fourth ferromagnetic layers and a second nonmagnetic layer, wherein in a write operation, magnetizations in the first and second recording layers execute a toggle operation by using the first and second write wirings.

REFERENCES:
patent: 6829162 (2004-12-01), Hosotani
patent: 7068531 (2006-06-01), Katti
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, 2000 Digest of Technical Papers, vol. Forty-Three ISSN 0193-6530, Feb. 8, 2000, pp. 128-129 and Cover page.
U.S. Appl. No. 11/133,383, filed May 20, 2005, Yoshihiro Ueda et al.

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