Magnetic random access memory including a cell array having...

Details Magnetic random access memory including a cell array having... Magnetic random access memory including a cell array having...

2005-04-26

2005-04-26

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06885579

ABSTRACT:
In a magnetic random access memory, a cross point cell array of memory cells is arranged in a matrix of columns and rows, and each of the memory cells has a magneto-resistance element. A column of dummy memory cells is provided, and each of the dummy memory cells has a magneto-resistance element. Word lines are provided for the rows of the memory cells and the dummy memory cells, respectively, and bit lines are provided for the columns of the memory cells, respectively. A dummy bit line is provided for the column of dummy memory cells. A read circuit is connected with the cross point cell array and the dummy bit line.

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