Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-09-27
2005-09-27
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S200000, C365S201000
Reexamination Certificate
active
06950334
ABSTRACT:
An MRAM has an internal test circuit. This test circuit detects a bit in a memory cell array, which has a shift in write characteristics, as a defective bit by using a method of applying a one-axis write current along an axis of hard magnetization.
REFERENCES:
patent: 6256224 (2001-07-01), Perner et al.
patent: 6584589 (2003-06-01), Perner et al.
patent: 6606262 (2003-08-01), Perner
patent: 6751147 (2004-06-01), Smith et al.
patent: 6791873 (2004-09-01), Perner
patent: 6850430 (2005-02-01), Perner
patent: 2004/0042297 (2004-03-01), Iwata et al.
patent: 2001-273799 (2001-10-01), None
Iwata Yoshihisa
Kishi Tatsuya
Shimizu Yuui
Tsuchida Kenji
Hur J. H.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Phung Anh
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