Magnetic random access memory having test circuit and test...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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Details

C365S171000, C365S173000, C365S200000, C365S201000

Reexamination Certificate

active

06950334

ABSTRACT:
An MRAM has an internal test circuit. This test circuit detects a bit in a memory cell array, which has a shift in write characteristics, as a defective bit by using a method of applying a one-axis write current along an axis of hard magnetization.

REFERENCES:
patent: 6256224 (2001-07-01), Perner et al.
patent: 6584589 (2003-06-01), Perner et al.
patent: 6606262 (2003-08-01), Perner
patent: 6751147 (2004-06-01), Smith et al.
patent: 6791873 (2004-09-01), Perner
patent: 6850430 (2005-02-01), Perner
patent: 2004/0042297 (2004-03-01), Iwata et al.
patent: 2001-273799 (2001-10-01), None

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