Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-03-08
2005-03-08
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S171000, C365S158000
Reexamination Certificate
active
06865109
ABSTRACT:
A magnetic random access memory comprises a plurality of memory elements each comprising a magnetic pinned layer; a synthetic antiferromagnetic free layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, wherein the directions of magnetization of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel; and a first conductive nonmagnetic layer positioned between the magnetic pinned layer and the synthetic antiferromagnetic free layer; and means for applying a current to each of the plurality of memory elements to affect the direction of magnetization of the synthetic antiferromagnetic free layer. A method of storing data using the magnetoresistive random access memory is also provided.
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Lenart Robert P.
Nguyen Dang T
Phung Anh
Pietragallo Bosick & Gordon
Seagate Technology LLC
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