Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-01
2005-03-01
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S189011, C365S230030, C365S230060
Reexamination Certificate
active
06862210
ABSTRACT:
A memory cell comprises a magneto-resistive element of which electrical resistance value varies with magnetism. A sub-bit line is connected to one end of the memory cell. A main-bit line is connected to the sub-bit line via a first selection circuit. A sense-amplifier is connected to the main-bit line via a second selection circuit. A wiring line is connected to the other end of the memory cell and arranged in a first direction. A first operation circuit is connected to one end of the wiring line via a third selection circuit. A second operation circuit is connected to the other end of the wiring line. A word line passes over an intersection between the memory cell and the wiring line and is arranged in a second direction perpendicular to the first direction.
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Higashi Tomoki
Iwata Yoshihisa
Tsuchida Kenji
Kabushiki Kaisha Toshiba
Nguyen Van Thu
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