Magnetic random access memory element

Details Magnetic random access memory element Magnetic random access memory element

2006-07-18

2006-07-18

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S185050

Reexamination Certificate

active

07079415

ABSTRACT:
A magnetic random access memory element is made from a first magnetic tunnel junction and a second magnetic tunnel junction. A latching circuit includes a false node that is connected to the first magnetic tunnel junction and a true node that is connected to the second magnetic tunnel junction. A pair of complementary bit lines are provided in association with the element. A first access transistor inter-connects a false one of the bit lines to the false node of the latching circuit, while a second access transistor inter-connects a true one of the bit lines to the true node of the latching circuit. The memory element accordingly has an SRAM four transistor (4T) two load (2R) architecture wherein the resistances associated with the two magnetic tunnel junctions provide the two load resistances.

REFERENCES:
patent: 5029141 (1991-07-01), Yoshimoto et al.
patent: 5274597 (1993-12-01), Ohbayashi et al.
patent: 5287304 (1994-02-01), Harward et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6532163 (2003-03-01), Okazawa
patent: 6594191 (2003-07-01), Lammers et al.
patent: 6597601 (2003-07-01), Ooishi
patent: 6639834 (2003-10-01), Sunaga et al.
patent: 6717844 (2004-04-01), Ohtani
patent: 6778429 (2004-08-01), Lu et al.
patent: 6778434 (2004-08-01), Tsuji
patent: 6795335 (2004-09-01), Hidaka
patent: 6829162 (2004-12-01), Hosotani
patent: 6862235 (2005-03-01), Sakata et al.
patent: 6891742 (2005-05-01), Takano et al.
patent: 6894918 (2005-05-01), Sharma et al.
patent: 6940749 (2005-09-01), Tsang
patent: 2002/0064067 (2002-05-01), Inui
patent: 2002/0027803 (2002-06-01), Matsui
patent: 2002/0080644 (2002-06-01), Ito
patent: 2003/0026125 (2003-02-01), Hidaka
patent: 2003/0058686 (2003-03-01), Ooishi et al.
patent: 2004/0052105 (2004-03-01), Fulkerson et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0208052 (2004-10-01), Hidaka
patent: 2005/0180203 (2005-08-01), Lin et al.
patent: 2005/0281080 (2005-12-01), Dray et al.
patent: 1 320 104 (2003-06-01), None
Nahas, “A 4Mb 0.μm 1T1MTJ Toggle MRAM Memory,” 2004 IEEE International Solid-State Circuits Conference, ISSCC 2004, Session 2, Non-Volatile Memory/2.3, 0-7803-8267-6, 2004.
Patent Abstracts of Japan, vol. 2000, No. 03, and JP 11 354728, Canon, Inc.

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