Magnetic random access memory designs with controlled...

Details Magnetic random access memory designs with controlled... Magnetic random access memory designs with controlled...

2007-07-10

2007-07-10

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C365S154000

Reexamination Certificate

active

11167852

ABSTRACT:
A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.

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Co-pending U.S. Patent App. HT-02-014, U.S. Appl. No. 10/647,716, filed Aug. 25, 2003, Magnetic Radom Access Memory Designs with Controlled Magnetic Switching Mechanism.

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