Magnetic random access memory cells having split subdigit...

Details Magnetic random access memory cells having split subdigit... Magnetic random access memory cells having split subdigit...

2008-03-13

2009-08-04

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S241000, C257S295000, C257SE21665, C365S097000

Reexamination Certificate

active

07569401

ABSTRACT:
Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

REFERENCES:
patent: 6430084 (2002-08-01), Rizzo et al.
patent: 6475812 (2002-11-01), Nickel et al.
patent: 6924520 (2005-08-01), Park et al.
patent: 6943420 (2005-09-01), Jeong
patent: 6992342 (2006-01-01), Motoyoshi et al.
patent: 7002195 (2006-02-01), Park
patent: 2002-176150 (2002-06-01), None

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