Magnetic random access memory cell device using magnetic...

Details Magnetic random access memory cell device using magnetic... Magnetic random access memory cell device using magnetic...

2005-08-16

2005-08-16

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06930910

ABSTRACT:
The present invention provides a magnetic random access memory (MRAM) cell device with a magnetic tunnel junction capable of obtaining a sufficient sense margins. To achieve this effect, the present invention provides a magnetic random access memory (MRAM) cell device, including: a word line; a bit line; a switching unit connected to the word line and the bit line; a magnetic tunnel junction unit connected to the bit line and the switching unit in parallel.

REFERENCES:
patent: 5894447 (1999-04-01), Takashima
patent: 6140672 (2000-10-01), Arita et al.
patent: 6191441 (2001-02-01), Aoki et al.
patent: 6226197 (2001-05-01), Nishimura
patent: 6236605 (2001-05-01), Mori et al.
patent: 6331943 (2001-12-01), Naji et al.
patent: 6791871 (2004-09-01), Freitag et al.
patent: 2000-132961 (2000-05-01), None
patent: 2000-133784 (2000-05-01), None
patent: 2000-187989 (2000-07-01), None

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