Magnetic random access memory cell

Details Magnetic random access memory cell Magnetic random access memory cell

2005-10-25

2005-10-25

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S158000, C365S200000, C257S295000, C257S421000

Reexamination Certificate

active

06958502

ABSTRACT:
A memory cell for use in a magnetic random access memory (MRAM) circuit includes at least first and second transistors formed in a semiconductor layer. A first insulating layer is formed on at least a portion of the first and second transistors. The memory cell further includes a first magnetic storage element formed on at least a portion of the first insulating layer, at least a second insulating layer formed on at least a portion of the first magnetic storage element, and at least a second magnetic storage element formed on at least a portion of the second insulating layer. The first and second magnetic storage elements are electrically connected to the first and second transistors, respectively.

REFERENCES:
patent: 6169689 (2001-01-01), Naji
patent: 6812538 (2004-11-01), Tsang

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