Magnetic random access memory array with thin conduction...

Details Magnetic random access memory array with thin conduction... Magnetic random access memory array with thin conduction...

2008-07-01

2008-07-01

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S424000

Reexamination Certificate

active

11001382

ABSTRACT:
An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.

REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6509621 (2003-01-01), Nakao
patent: 6611455 (2003-08-01), Sekiguchi et al.
Co-pending U.S. Patent App. HT-03-044, filed Aug. 3, 2004, U.S. Appl. No. 10/910,725, assigned to the same assignee, “Magnetic Random Access Memory Array With Proximate Read and Write Lines Cladded With Magnetic Material.”
“A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications”, by A.R. Sitaram et al., MRAM Development Alliance, IBM/Infineon Technologies, IBM Semiconductor Research and Dev. Center, Hopewell Jctn., NY, USA.

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