Magnetic random access memory array with thin conduction...

Details Magnetic random access memory array with thin conduction... Magnetic random access memory array with thin conduction...

2008-07-01

2008-07-01

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S431000, C257S659000, C257SE21208, C257SE21665, C257SE27006

Reexamination Certificate

active

11438179

ABSTRACT:
An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. Because the lines require thinner depositions, there is no necessity of removing material by CMP during patterning and polishing. Therefore, there is a uniform spacing between the lines and the cell free layer.

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“A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications”, by A.R. Sitram et al., MRAM Development Alliance, IBM/Infinean Technologies, Hopewell Junction, NY, USA, date unknown.

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