Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-11-14
2006-11-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07136298
ABSTRACT:
A random access memory array includes random access memory elements arranged in a rows and columns. Each row is divided into a plurality of row groups of elements and each column is divided into a plurality of column groups of elements. The elements in each row group share a common local write digit line and the elements in each column group share a common local write bit line. The array further includes at least one global write digit line coupled to the common local write digit lines of plural row groups, and at least one global write bit line coupled to the common local write bit lines of plural column groups.
REFERENCES:
patent: 5029141 (1991-07-01), Yoshimoto et al.
patent: 5274597 (1993-12-01), Ohbayashi et al.
patent: 5287304 (1994-02-01), Harward et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6532163 (2003-03-01), Okazawa
patent: 6594191 (2003-07-01), Lammers et al.
patent: 6639834 (2003-10-01), Sunaga et al.
patent: 6717844 (2004-04-01), Ohtani
patent: 6778429 (2004-08-01), Lu et al.
patent: 6778434 (2004-08-01), Tsuji
patent: 6795335 (2004-09-01), Hidaka
patent: 6829162 (2004-12-01), Hosotani
patent: 6862235 (2005-03-01), Sakata et al.
patent: 6891742 (2005-05-01), Takano et al.
patent: 6894918 (2005-05-01), Sharma et al.
patent: 6940749 (2005-09-01), Tsang
patent: 2002/0027803 (2002-03-01), Matsui
patent: 2002/0064067 (2002-05-01), Inui
patent: 2002/0080644 (2002-06-01), Ito
patent: 2003/0026125 (2003-02-01), Hidaka
patent: 2003/0058686 (2003-03-01), Ooishi et al.
patent: 2004/0052105 (2004-03-01), Fulkerson et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0208052 (2004-10-01), Hidaka
patent: 2005/0180203 (2005-08-01), Lin et al.
patent: 2005/0281080 (2005-12-01), Dray et al.
patent: 1 320 104 (2003-06-01), None
Patent Abstracts of Japan, vol. 2000, No. 03, and JP 11 354728, Canon, Inc.
Nahas, “A 4Mb 0.μm 1T1MTJ Toggle MRAM Memory,” 2004 IEEE International Solid-State Circuits Conference, ISSCC 2004, Session 2, Non-Volatile Memory/2.3, 0-7803-8267-6, 2004.
Jorgenson Lisa K.
Phung Anh
STMicroelectronics Inc.
Szuwalski Andre M.
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