Static information storage and retrieval – Systems using particular element – Three-dimensional magnetic array
Reexamination Certificate
2007-04-02
2008-10-28
Menz, Douglas M (Department: 2891)
Static information storage and retrieval
Systems using particular element
Three-dimensional magnetic array
C365S232000, C365S066000, C257S421000
Reexamination Certificate
active
07443707
ABSTRACT:
A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
REFERENCES:
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6480412 (2002-11-01), Bessho et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6576969 (2003-06-01), Tran et al.
patent: 6593608 (2003-07-01), Sharma et al.
patent: 6597049 (2003-07-01), Bhattacharyya et al.
patent: 6661688 (2003-12-01), Bloomquist et al.
patent: 2002/0034094 (2002-03-01), Saito et al.
patent: 2004/0089904 (2004-05-01), Bhattacharyya et al.
patent: 2004/0233760 (2004-11-01), Guo et al.
Guo Yimin
Min Tai
Shi Xizeng
Wang Po-Kang
Ackerman Stephen B.
Applied Spintronics Inc.
Headway Technologies Inc.
Menz Douglas M
Saile Ackerman LLC
LandOfFree
Magnetic random access memory array with free layer locking... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic random access memory array with free layer locking..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory array with free layer locking... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4012321