Magnetic random access memory array having bit/word lines...

Details Magnetic random access memory array having bit/word lines... Magnetic random access memory array having bit/word lines...

2007-04-24

2007-04-24

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S230060

Reexamination Certificate

active

11159858

ABSTRACT:
A random access memory array includes random access memory elements arranged in a rows and columns. The elements of each row have a word line and a write digit line and the elements of each column have a bit line and a write bit line. A first selection circuit/transistor for each row has a first source-drain path coupled in the write digit line and a gate terminal coupled to the word line. A second selection circuit/transistor for each column has a second source-drain path coupling in the write bit line and a gate terminal coupled to the bit line. A first write signal is applied to one word line to actuate the first selection circuit/transistor for the row corresponding to that one word line and cause a write current to flow through the first source-drain path of the actuated first selection circuit/transistor and the corresponding write digit line to write data into certain memory elements in that row. A second write signal is applied to one bit line to actuate the second selection circuit/transistor for the column corresponding to that one bit line and cause a write current to flow through the second source-drain path of the actuated second selection circuit/transistor and the corresponding write bit line to write data into at least one memory element in that column.

REFERENCES:
patent: 5029141 (1991-07-01), Yoshimoto et al.
patent: 5274597 (1993-12-01), Ohbayashi et al.
patent: 5287304 (1994-02-01), Harward et al.
patent: 5748545 (1998-05-01), Lee et al.
patent: 6331943 (2001-12-01), Naji et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6532163 (2003-03-01), Okazawa
patent: 6594191 (2003-07-01), Lammers et al.
patent: 6639834 (2003-10-01), Sunaga et al.
patent: 6714442 (2004-03-01), Nahas
patent: 6717844 (2004-04-01), Ohtani
patent: 6778429 (2004-08-01), Lu et al.
patent: 6778434 (2004-08-01), Tsuji
patent: 6795335 (2004-09-01), Hidaka
patent: 6829162 (2004-12-01), Hosotani
patent: 6862235 (2005-03-01), Sakata et al.
patent: 6891742 (2005-05-01), Takano et al.
patent: 6894918 (2005-05-01), Sharma et al.
patent: 6903964 (2005-06-01), Nahas et al.
patent: 6940749 (2005-09-01), Tsang
patent: 7061800 (2006-06-01), Ooishi
patent: 2002/0027803 (2002-03-01), Matsui
patent: 2002/0034117 (2002-03-01), Okazawa
patent: 2002/0064067 (2002-05-01), Inui
patent: 2002/0080644 (2002-06-01), Ito
patent: 2002/0176272 (2002-11-01), DeBrosse et al.
patent: 2003/0026125 (2003-02-01), Hidaka
patent: 2003/0058686 (2003-03-01), Ooishi et al.
patent: 2004/0047204 (2004-03-01), Hung et al.
patent: 2004/0052105 (2004-03-01), Fulkerson et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0165424 (2004-08-01), Tsang
patent: 2004/0208052 (2004-10-01), Hidaka
patent: 2005/0180203 (2005-08-01), Lin et al.
patent: 2005/0281080 (2005-12-01), Dray et al.
patent: 1 320 104 (2003-06-01), None
patent: 1 607 979 (2005-12-01), None
Patent Abstracts of Japan, vol. 2000, No. 3, and JP 11 354728, Canon, Inc.
Nahas, “A 4Mb 0.μm 1T1MTJ Toggle MRAM Memory,” 2004 IEEE International Solid-State Circuits Conference, ISSCC 2004, Session 2, Non-Volatile Memory/2.3, 0-7803-8267-6, 2004.
European Search Report, EP 06 25 2950, dated Oct. 6, 2006.

Affiliated with

Also associated with

Rating

Magnetic random access memory array having bit/word lines... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory array having bit/word lines..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory array having bit/word lines... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3759546