Magnetic random access memory array divided into a plurality of

Details Magnetic random access memory array divided into a plurality of Magnetic random access memory array divided into a plurality of

1998-08-03

2000-08-29

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1100

Patent

active

061117811

ABSTRACT:
An MRAM device has a new type of memory bank (10) that includes bit lines (21-24), a reference line (27) and digit lines (25, 26), on intersections of bit lines and digit lines a plurality of magnetic memory cells (15-18) are arrayed. Bit lines are formed on both sides of the reference line on a substrate. Since each bit line is fabricated closely to the reference line, each cell has substantially the same hysteresis characteristics, which allow the MRAM device to provide a steady operation mode.

REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5831920 (1998-11-01), Chen
patent: 5894447 (1999-04-01), Takashima
patent: 5946227 (1999-08-01), Naji

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