Magnetic random access memory and write method of the same

Details Magnetic random access memory and write method of the same Magnetic random access memory and write method of the same

2011-06-21

2011-06-21

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000, C977S935000

Reexamination Certificate

active

07965542

ABSTRACT:
A magnetic random access memory includes a memory cell element which includes a first fixed layer, a first recording layer in which a magnetization direction reverses on the basis of a first threshold value, and a first nonmagnetic layer formed between the first fixed layer and the first recording layer, a first interconnection connected to one terminal of the memory cell element, a transistor whose current path has one end connected to the other terminal of the memory cell element, a second interconnection connected to the other end of the current path, and a first resistance change element electrically connected to the memory cell element, and having a resistance value which changes on the basis of a second threshold value.

REFERENCES:
patent: 7079414 (2006-07-01), Iwata et al.
patent: 7106624 (2006-09-01), Huai et al.
patent: 7110284 (2006-09-01), Hayakawa et al.
patent: 7209378 (2007-04-01), Nejad et al.
patent: 7251154 (2007-07-01), Hush
patent: 7558103 (2009-07-01), Nakamura et al.
patent: 7668000 (2010-02-01), Hush
patent: 2004/0252551 (2004-12-01), Iwata et al.
patent: 2005/0117392 (2005-06-01), Hayakawa et al.
patent: 2005/0201023 (2005-09-01), Huai et al.
patent: 2007/0057278 (2007-03-01), Nakamura et al.
patent: 2007/0211525 (2007-09-01), Nakamura et al.
patent: 2009/0046501 (2009-02-01), Ranjan et al.
patent: 2010/0073025 (2010-03-01), Tanamoto et al.
patent: 2010/0091546 (2010-04-01), Liu et al.
M. Hosomi, et al. “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM” IEEE, 2005, 4 Pages.
J. C. Slonczewski, “Current-driven excitation of magnetic multilayers”, Journal of Magnetism and Magnetic Materials 159, 1996, pp. L1-L7.

Affiliated with

Also associated with

Rating

Magnetic random access memory and write method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory and write method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory and write method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2732414