Magnetic random access memory and write method of the same

Details Magnetic random access memory and write method of the same Magnetic random access memory and write method of the same

2011-01-11

2011-01-11

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S130000, C365S171000, C365S173000, C365S225500, C365S243500

Reexamination Certificate

active

07869265

ABSTRACT:
A magnetic random access memory includes a first interconnection extending to a first direction, a second interconnection extending to a second direction perpendicular to the first direction, a magnetoresistive effect element formed between the first and second interconnections, having one terminal connected to the first interconnection, includes a fixed layer, a recording layer and a nonmagnetic layer, a film thickness of the fixed layer being larger than that of the recording layer, and a width of the fixed layer being larger than that of the recording layer, and configured to reverse a magnetization direction in the recording layer by supplying a first electric current between the fixed layer and the recording layer, and a diode having one terminal connected to the other terminal of the magnetoresistive effect element, and the other terminal connected to the second interconnection, and configured to supply the first electric current in only one direction.

REFERENCES:
patent: 6731535 (2004-05-01), Ooishi et al.
patent: 2004/0017721 (2004-01-01), Schwabe et al.
patent: 2006/0220084 (2006-10-01), Umehara et al.
patent: 2007/0047295 (2007-03-01), Cho et al.
patent: 2006-128579 (2006-05-01), None
patent: 2006-156840 (2006-06-01), None
T. Kawahara, et al., “ 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read”, 2007 IEEE International Solid-State Circuits Conference, ISSCC Digest of Technical Papers, Session 26, Non-Volatile Memories, 26.5, Feb. 14, 2007, pp. 480-481 and p. 617.
W.C. Jeong, et al., “Highly Scalable MRAM Using Field Assisted Current Induced Switching”, Symposium on VLSI Technology Digest of Technical Papers, 10B-1, 2005, pp. 184-185.

Affiliated with

Also associated with

Rating

Magnetic random access memory and write method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory and write method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory and write method of the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2626896