Magnetic random access memory and operation method of the same

Details Magnetic random access memory and operation method of the same Magnetic random access memory and operation method of the same

2011-02-08

2011-02-08

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07885095

ABSTRACT:
A magnetic random access memory of the present invention includes: a plurality of first wirings and a plurality of second wirings extending in a first direction; a plurality of third wirings and a plurality of fourth wirings extending in a second direction; and a plurality of memory cells provided at intersections of the plurality of first wirings and the plurality of third wirings, respectively. Each of the plurality of memory cells includes: a first transistor and a second transistor connected in series between one of the plurality of first wirings and one of the plurality of second wirings and controlled in response to a signal on one of the plurality of third wirings, a first magnetic resistance element having one end connected to a write wiring through which the first transistor and the second transistor are connected, and the other end grounded; and a second magnetic resistance element having one end connected to the write wiring, and the other end connected to the fourth wiring.

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