Magnetic random access memory and operating method of the same

Details Magnetic random access memory and operating method of the same Magnetic random access memory and operating method of the same

2006-12-21

2009-02-17

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07492629

ABSTRACT:
A semiconductor memory device is provided with a memory array including memory cells arranged in rows and columns; and a sense amplifier circuit. Each of the memory cells includes at least one magnetoresistive element storing data, and an amplifying member used to amplify a signal generated by a current through the at least one magnetoresistive element. The sense amplifier circuit identifies data stored in the at least one magnetoresistive element in response to an output signal of the amplifying member.

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