Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-11-29
2005-11-29
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C257S684000
Reexamination Certificate
active
06970376
ABSTRACT:
A magnetic random access memory includes first and second write wirings extended in first and second directions, a magneto-resistance element located between the first and second write wirings, a first yoke layer provided on a first outer surface and both sides of the first write wiring and being formed of a magnetic layer, and a second yoke layer provided on a second outer surface and both sides of the second write wiring and being formed of a magnetic layer, wherein the magneto-resistance element has a recording layer formed of a ferromagnetic substance and comprising a first surface and a second surface, a first ferromagnetic layer provided on the first surface, a second ferromagnetic layer provided on the second surface, a first nonmagnetic layer provided between the recording layer and the first ferromagnetic layer, and a second nonmagnetic layer provided between the recording layer and the second ferromagnetic layer.
REFERENCES:
patent: 6797536 (2004-09-01), Yoda et al.
patent: 2005/0018478 (2005-01-01), Nagase et al.
Elms Richard
Nguyen N.
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