Magnetic random access memory and method of manufacturing...

Details Magnetic random access memory and method of manufacturing... Magnetic random access memory and method of manufacturing...

2007-10-02

2007-10-02

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11213855

ABSTRACT:
A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

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