Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-04-05
2011-04-05
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000
Reexamination Certificate
active
07920412
ABSTRACT:
A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.
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Asao Yoshiaki
Hosotani Keiji
Nitayama Akihiro
Kabushiki Kaisha Toshiba
Le Vu A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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