Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-08-30
2011-08-30
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
08009464
ABSTRACT:
A magnetic random access memory includes a semiconductor substrate in which a step portion having a side surface and a top face is formed, a gate electrode formed on the side surface of the step portion through a gate insulating film, a drain diffusion layer formed in the top face of the step portion, a source diffusion layer formed in the semiconductor substrate below the drain diffusion layer to be separated from the drain diffusion layer, a magnetoresistive effect element which is connected with the drain diffusion layer, and has a fixed layer, a recording layer and a non-magnetic layer, the magnetization directions of the fixed layer and the recording layer entering a parallel state or an antiparallel state in accordance with a direction of a current flowing through a space between the fixed layer and the recording layer, and a bit line connected with the magnetoresistive effect element.
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Kabushiki Kaisha Toshiba
Le Toan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phung Anh
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