Magnetic random access memory and manufacturing method thereof

Details Magnetic random access memory and manufacturing method thereof Magnetic random access memory and manufacturing method thereof

2011-08-30

2011-08-30

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

08009464

ABSTRACT:
A magnetic random access memory includes a semiconductor substrate in which a step portion having a side surface and a top face is formed, a gate electrode formed on the side surface of the step portion through a gate insulating film, a drain diffusion layer formed in the top face of the step portion, a source diffusion layer formed in the semiconductor substrate below the drain diffusion layer to be separated from the drain diffusion layer, a magnetoresistive effect element which is connected with the drain diffusion layer, and has a fixed layer, a recording layer and a non-magnetic layer, the magnetization directions of the fixed layer and the recording layer entering a parallel state or an antiparallel state in accordance with a direction of a current flowing through a space between the fixed layer and the recording layer, and a bit line connected with the magnetoresistive effect element.

REFERENCES:
patent: 6855564 (2005-02-01), Cha
patent: 7095069 (2006-08-01), Cha
patent: 7205598 (2007-04-01), Voshell et al.
patent: 7919826 (2011-04-01), Iwayama et al.
patent: 2004/0100818 (2004-05-01), Yoda et al.
patent: 2005/0007819 (2005-01-01), Fukuzumi
patent: 2005/0259464 (2005-11-01), Kajiyama et al.
patent: 2002-208682 (2002-07-01), None
patent: 2004-179489 (2004-06-01), None

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