Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-01-31
2006-01-31
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06992921
ABSTRACT:
A magnetic random access memory includes a first write wiring line which runs in a first direction, a second write wiring line which has first and second regions run in the first and second directions, a magnetoresistive element formed between the first write wiring line and the first region, first and second yoke layers, the magnetoresistive element having a recording layer which has an easy axis of magnetization whose direction in a non-energized state tilts by 30° to 60° with respect to the first direction, first and second ferromagnetic layers which are formed from a ferromagnetic material whose direction of magnetization in the non-energized state is aligned to the first direction, and magnetically coupled to the recording layer, and first and second nonmagnetic layers formed between the recording layer and the first and second ferromagnetic layers, respectively.
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Hoang Huan
Kabushiki Kaisha Toshiba
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