Magnetic random access memory and data read method thereof

Details Magnetic random access memory and data read method thereof Magnetic random access memory and data read method thereof

2005-11-01

2005-11-01

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S230030

Reexamination Certificate

active

06961261

ABSTRACT:
A magnetic random access memory having a memory cell array in which one block is formed from a plurality of magnetoresistive elements using a magnetoresistive effect, and a plurality of blocks are arranged in row and column directions, includes a plurality of first magnetoresistive elements arranged in a first block, a plurality of first word lines each of which is independently connected to one terminal of a corresponding one of the first magnetoresistive elements and runs in the row direction, a first read sub bit line commonly connected to the other terminal of each of the first magnetoresistive elements, a first block select switch whose first current path has one end connected to one end of the first read sub bit line, and a first read main bit line which is connected to the other end of the first current path and runs in the column direction.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5894447 (1999-04-01), Takashima
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6169688 (2001-01-01), Noguchi
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6191972 (2001-02-01), Miura et al.
patent: 6226197 (2001-05-01), Nishimura
patent: 6256247 (2001-07-01), Perner
patent: 6259644 (2001-07-01), Tran et al.
patent: 6272041 (2001-08-01), Naji
patent: 6317375 (2001-11-01), Perner
patent: 6324093 (2001-11-01), Perner et al.
patent: 6331943 (2001-12-01), Naji et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6356477 (2002-03-01), Tran
patent: 6445613 (2002-09-01), Nagai
patent: 6456524 (2002-09-01), Perner et al.
patent: 6477077 (2002-11-01), Okazawa
patent: 6490191 (2002-12-01), Pochmuller
patent: 6532163 (2003-03-01), Okazawa
patent: 6643168 (2003-11-01), Okazawa
patent: 6724653 (2004-04-01), Iwata et al.
patent: 6795334 (2004-09-01), Iwata et al.
patent: 6839269 (2005-01-01), Iwata et al.
patent: 2003/0123271 (2003-07-01), Iwata
patent: 2003/0161197 (2003-08-01), Iwata et al.
patent: 2003/0198080 (2003-10-01), Iwata
patent: 2004/0125647 (2004-07-01), Iwata et al.
patent: 0 959 475 (1999-11-01), None
patent: 2000-296082 (2000-09-01), None
patent: 2001-350013 (2001-11-01), None
patent: 2001-365236 (2001-11-01), None
patent: 2001-390518 (2001-12-01), None
patent: 2001-390549 (2001-12-01), None
patent: 2001-401850 (2001-12-01), None
patent: 2002-140499 (2002-05-01), None
patent: 2002-176683 (2002-06-01), None
patent: WO 02/41321 (2002-05-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, 2000 IEEE ISSCC Digest of Technical Papers, Feb. 2000, pp. 128-129.
M. Durlam, et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, 2000 IEEE ISSCC Digest of Technical Papers, Feb. 2000, pp. 130-131.

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