Magnetic random access memory and data read method of the same

Details Magnetic random access memory and data read method of the same Magnetic random access memory and data read method of the same

2007-08-29

2010-11-16

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S158000, C365S171000, C365S173000, C365S210100

Reexamination Certificate

active

07835210

ABSTRACT:
A magnetic random access memory includes a memory element having a first fixed layer, a first recording layer, and a first nonmagnetic layer, a first reference element having a second fixed layer, a second recording layer, and a second nonmagnetic layer, antiparallel data being written in the first reference element, a second reference element making a pair with the first reference element, and having a third fixed layer, a third recording layer, and a third nonmagnetic layer, parallel data being written in the second reference element, and a current source which, when a read operation is performed, supplies a current from the second fixed layer to the second recording layer in the first reference element, and supplies the current from the third recording layer to the third fixed layer in the second reference element.

REFERENCES:
patent: 6697294 (2004-02-01), Qi et al.
patent: 7116598 (2006-10-01), Shimizu et al.
patent: 7286429 (2007-10-01), Liaw et al.
patent: 7313043 (2007-12-01), Gogl et al.
patent: 7495984 (2009-02-01), Kim et al.
patent: 2004-220759 (2004-08-01), None
W. C. Jeong, et al., “Highly scalable MRAM using field assisted current induced switching”, 2005 Symposium on VLSI Technology Digest of Technical Papers, 10B-1, pp. 184-185.
T. Kawahara, et al., “2 Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read”, ISSCC Digest of Technical Papers, IEEE International Solid-State Circuits Conference, vol. 50, Session 26, ISSN 0193-6530, Feb. 11-15, 2007, pp. 480, 481 and 3 cover pages.

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