Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-09-07

2009-12-08

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S189090

Reexamination Certificate

active

07630234

ABSTRACT:
An MRAM having a first cell array group (2-0)and a second cell array group (2-1) containing a plurality of cell arrays (21) is used. Each of the first cell array group (2-0) and the second cell array group (2-1) includes a first current source unit for supplying a first write current IWBL to a bit line WBL of the cell array (21) and a first current waveform shaping unit having a first capacitor requiring precharge and shaping the waveform of the first write current IWBL. When the cell array (21) performs write into a magnetic memory (24), the first current waveform shaping unit of the first cell array group (2-0) and the first current waveform shaping unit of the second cell array group (2-1) charges and discharges electric charge accumulated in the first capacitor to wiring toward the bit line WBL at different periods from each other.

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