Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-04-28

2008-12-16

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S158000, C365S213000

Reexamination Certificate

active

07466585

ABSTRACT:
An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

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