Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2007-11-06

2007-11-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

Reexamination Certificate

active

11194534

ABSTRACT:
A magnetic random access memory includes a first magnetoresistive element which is used as a memory element, and a second magnetoresistive element which is used as a current load of a read bias circuit.

REFERENCES:
patent: 6445612 (2002-09-01), Naji
patent: 6587371 (2003-07-01), Hidaka
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Peter K. Naji, et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, Feb. 2001, pp. 122-123.
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, 2000, pp. 128-129.

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