Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2007-09-11

2007-09-11

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230060

Reexamination Certificate

active

11298597

ABSTRACT:
A magnetic random access memory includes first write lines separated from one another and extending along a first direction. Second write lines extend in a direction different from the first direction. The MTJ elements are provided between the first write lines and the second write lines. Connection lines connect the first write lines. Sinkers are connected to ends of the first write lines and to the first write lines at between the connection lines and extract currents from the first write lines. Drivers are connected to ends of the first write lines and supply currents to the first write lines.

REFERENCES:
patent: 2004/0125647 (2004-07-01), Tsuchida et al.
patent: 2005/0157541 (2005-07-01), Iwata
patent: 2004-213771 (2004-07-01), None
U.S. Appl. No. 11/298,597, filed Dec. 12, 2005, Takizawa et al.
U.S. Appl. No. 11/390,254, filed Mar. 28, 2006, Inaba et al.
U.S. Appl. No. 11/065,143, filed Feb. 24, 2005, Inaba.

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