Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-08-29

2006-08-29

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S097000, C365S055000, C365S100000

Reexamination Certificate

active

07099184

ABSTRACT:
An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.

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Office Action issued by Japanese Patent Office, Japanese Patent Application No. 2003-397854, dated Dec. 12, 2005 (with English translation of relevant sections).

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