Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-12-19

2006-12-19

Tran, M. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07151691

ABSTRACT:
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.

REFERENCES:
patent: 4791604 (1988-12-01), Lienau et al.
patent: 5969978 (1999-10-01), Prinz
patent: 5991193 (1999-11-01), Gallagher et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6452764 (2002-09-01), Abraham et al.
patent: 6501679 (2002-12-01), Hidaka
patent: 6515897 (2003-02-01), Monsma et al.
patent: 6577527 (2003-06-01), Freitag et al.
patent: 6741513 (2004-05-01), Honigschmid et al.
patent: 6777731 (2004-08-01), Kreupl
patent: 6795334 (2004-09-01), Iwata et al.
patent: 6859410 (2005-02-01), Scheuerlein et al.
patent: 6861752 (2005-03-01), Kajiyama
patent: 6879515 (2005-04-01), Yoda et al.
patent: 2001/0023992 (2001-09-01), Doll
patent: 10-106255 (1998-04-01), None
patent: 2000-76844 (2000-03-01), None
patent: 2000-187976 (2000-07-01), None
patent: 2000-195250 (2000-07-01), None
patent: 2001-67862 (2001-03-01), None
patent: 2001-217398 (2001-08-01), None
patent: 2001-236781 (2001-08-01), None
patent: 2001-273757 (2001-10-01), None
patent: 2002-25245 (2002-01-01), None
patent: 2002-203390 (2002-07-01), None
patent: 2002-359355 (2002-12-01), None
patent: 2003-133528 (2003-05-01), None
patent: 2002-0002291 (2002-01-01), None
R. Scheuerlein, et al., ISSCC2000 Technical Digest, vol. 128, 5 pages, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and Fet Switch in Each Cell”, Feb. 8, 2000.

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