Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-01-24

2006-01-24

Phung, Anh (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S158000, C365S130000, C365S171000, C365S173000, C365S225600, C365S066000, C365S051000

Reexamination Certificate

active

06990004

ABSTRACT:
A read block is formed from a plurality of TMR elements stacked in the vertical direction. One terminal of each TMR element in the read block is connected to a source line through a read select switch. The source line extends in the Y-direction and is connected to a ground point through a column select switch. The other terminal of each TMR element is independently connected to a corresponding one of read/write bit lines. Each read/write bit line extends in the Y-direction and is connected to a read circuit through the column select switch.

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