Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2006-01-10

2006-01-10

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C438S048000

Reexamination Certificate

active

06984865

ABSTRACT:
A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

REFERENCES:
patent: 6430085 (2002-08-01), Rizzo
patent: 6548849 (2003-04-01), Pan et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 2003-209227 (2003-07-01), None

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