Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-05-30
2006-05-30
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07054186
ABSTRACT:
There is disclosed a magnetic random access memory according to an example of the present invention, comprising first and second write lines which intersect with each other, and a plurality of magneto resistive elements stacked on an intersecting portion of the first and second write lines, wherein easy axis directions of magnetizations of storage layers of the plurality of magneto resistive elements are different from each other.
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